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Solid-state storage devices and the block layerSolid-state storage devices and the block layerPosted Oct 7, 2010 12:38 UTC (Thu) by nix (subscriber, #2304)In reply to: Solid-state storage devices and the block layer by jzbiciak Parent article: Solid-state storage devices and the block layer
NAND flash has a notion of "sequential page read" versus "random page read". If you're truly reading random bytes a'la DRAM w/out cache, you'll see noticeably slower performance if the two reads are in different pages.That sounds just like normal RAM: if you don't have to specify the row *and* column, you save on one CAS/RAS select cycle. Of course this is hidden behind the MMU and CPU cache management code and so on, so we don't often notice it, but it is there.
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